Simulation and analysis of 1300-nm in0.4Ga0.6as 0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers

Yi An Chang*, Hao-Chung Kuo, Ya Hsien Chang, Shing Chung Wang, Li Hong Laih

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this article, the laser performance of the 1300-nm In 0.4Ga0.6As0.986N0.014/GaAs 1-xNx quantum well lasers with various GaAs 1-xNx strain compensated barriers (x=0%, 0.5%, 1%, and 2%) have been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x=0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient T0 values of 110 K and 94 K at the temperature range of 300-370 K As the nitrogen composition in GaAs1-xNx barrier increases more than 1% the laser performance degrades rapidly and the T0 value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In 0.4Ga0.6As0.986N0.014 QW and GaAs1-xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1-xNx quantum-well lasers are also investigated.

Original languageEnglish
Article number08
Pages (from-to)40-48
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5628
DOIs
StatePublished - 1 Jun 2005
EventSemiconductor Lasers and Applications II - Beijing, China
Duration: 8 Nov 20049 Nov 2004

Keywords

  • III-V semiconductor
  • InGaAsN
  • Numerical simulation
  • Strain compensate

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