Simulating the effects of single-event and radiation phenomena on GaAs MESFET integrated circuits

Peter George*, Ping K. Ko, Chenmlng Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

A device model is described for the simulation of the effects of single-event and radiation phenomena on the operation of GaAs MESFETs. The model can be utilized in a circuit simulator to evaluate integrated-circuit designs and aid in the provision of adequate upset margins for various operating environments. Additional subcircuit construction is unnecessary since the electrical responses to the different phenomena are intrinsic to the device template. Example simulations using SPICE3 are described.

Original languageEnglish
Article number5726192
Pages (from-to)9.7.1-9.7.4
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 1 May 1989
Event11th IEEE 1989 Custom Integrated Circuits Conference, CICC'89 - San Diego, CA, United States
Duration: 15 May 198918 May 1989

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