Simulating the Competing Effects of P- and N-MOSFET Hot-Carrier Aging in CMOS Circuits

Peter M. Lee, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A PMOSFET hot-carrier degradation model has been incorporated into the reliability simulator BERT-CAS, enabling prediction of dynamic circuit-level degradation in which both PMOSFET and NMOS-FET degradation play as a major role. Comparisons with measured data from CMOS ring oscillator frequency shifts show that full aging simulation by CAS can correctly predict the initial frequency increase due to the PMOSFET current enhancement, and the eventual frequency decrease due to the NMOSFET current degradation.

Original languageEnglish
Pages (from-to)852-853
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume41
Issue number5
DOIs
StatePublished - 1 Jan 1994

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