Simulating radiation reliability with BERT

Paolo Pavan*, Robert Tu, Eric Minami, Gary Lum, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phonomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.

Original languageEnglish
Pages (from-to)627-633
Number of pages7
JournalMicroelectronics Journal
Volume26
Issue number6
DOIs
StatePublished - 1 Jan 1995

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