Silicon nanowire field-effect-transistor based biosensors: From sensitive to ultra-sensitive

Mo Yuan Shen, Bor-Ran Li*, Yaw-Kuen Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

74 Scopus citations


Silicon nanowire field effect transistors (SiNW-FETs) have shown great promise as biosensors in highly sensitive, selective, real-time and label-free measurements. While applications of SiNW-FETs for detection of biological species have been described in several publications, less attention has been devoted to summarize the conjugating methods involved in linking organic bio-receptors with the inorganic transducer and the strategies of improving the sensitivity of devices. This article attempts to focus on summarizing the various organic immobilization approaches and discussing various sensitivity improving strategies, that include (I) reducing non-specific binding, (II) alignment of the probes, (III) enhancing signals by charge reporter, (IV) novel architecture structures, and (V) sensing in the sub-threshold regime.

Original languageEnglish
Pages (from-to)101-111
Number of pages11
JournalBiosensors and Bioelectronics
StatePublished - 15 Oct 2014


  • Biosensor
  • Field-effect transistor
  • Sensitivity enhancement
  • Surface modification

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