Silicon introduced effect on resistive switching characteristics of WO X thin films

Yong En Syu*, Ting Chang Chang, Tsung Ming Tsai, Geng Wei Chang, Kuan Chang Chang, Ya-Hsiang Tai, Ming Jinn Tsai, Ying Lang Wang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The switching layer with Si interfusion is investigated to improve the electrical characteristics of WO X resistance random access memory (RRAM). The WO X has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WO X-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WO X resistance switching layer because the tungsten filament path is limited by SiO X in the WSiO X film during the forming process.

Original languageEnglish
Article number022904
JournalApplied Physics Letters
Volume100
Issue number2
DOIs
StatePublished - 9 Jan 2012

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    Syu, Y. E., Chang, T. C., Tsai, T. M., Chang, G. W., Chang, K. C., Tai, Y-H., Tsai, M. J., Wang, Y. L., & Sze, S. M. (2012). Silicon introduced effect on resistive switching characteristics of WO X thin films. Applied Physics Letters, 100(2), [022904]. https://doi.org/10.1063/1.3676194