@inproceedings{272a0f9ba7ca4196b2ed2d6751137190,
title = "Silicon-germanium structure in surrounding-gate strained silicon nanowire FETs",
abstract = "The thickness effect of silicon-germanium structure for surrounding-gate strained silicon nanowire field-effect transistors (FET) was investigated using 3D nanodevice simulator. It was found that the radius of the silicon-germanium (R SiGe increased the driving current and did not change the transfer characteristics. It was also found that the larger silicon-germanium radius implied higher drain current due to a higher stress caused from the thinner silicon film. The results show that the sample FET obtains a higher driving current without significantly changing the threshold voltage and on/off current ratio.",
author = "Lee, {Jam Wem} and Yi-Ming Li",
year = "2004",
month = oct,
doi = "10.1109/IWCE.2004.1407376",
language = "English",
isbn = "0780386493",
series = "2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts",
pages = "161--162",
booktitle = "2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts",
note = "null ; Conference date: 24-10-2004 Through 27-10-2004",
}