Silicon-germanium structure in surrounding-gate strained silicon nanowire FETs

Jam Wem Lee, Yi-Ming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The thickness effect of silicon-germanium structure for surrounding-gate strained silicon nanowire field-effect transistors (FET) was investigated using 3D nanodevice simulator. It was found that the radius of the silicon-germanium (R SiGe increased the driving current and did not change the transfer characteristics. It was also found that the larger silicon-germanium radius implied higher drain current due to a higher stress caused from the thinner silicon film. The results show that the sample FET obtains a higher driving current without significantly changing the threshold voltage and on/off current ratio.

Original languageEnglish
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages161-162
Number of pages2
DOIs
StatePublished - Oct 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: 24 Oct 200427 Oct 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Conference

Conference2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period24/10/0427/10/04

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