Silicided silicon-sidewall source and drain (S4D) structure for high-performance 75-nm gate length pMOSFETs

T. Yoshitomi*, M. Saito, T. Ohguro, M. Ono, H. S. Momose, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

Silicided Silicon-Sidewall Source and Drain (S4D) structures are proposed for sub-0.1 μm gate length p-MOSFETs as the structure that can realize extremely small source and drain series resistance with small short-channel effects. Seventy five nm gate length p-MOSFETs fabricated using this structure are found to exhibit good electrical characteristics. In addition to p-MOSFETs, the S4D structures can be extended to the sub-0.1 μm gate length CMOS devices.

Original languageEnglish
Pages (from-to)11-12
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1995
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 6 Jun 19958 Jun 1995

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