Silicided Silicon-Sidewall Source and Drain (S4D) structures are proposed for sub-0.1 μm gate length p-MOSFETs as the structure that can realize extremely small source and drain series resistance with small short-channel effects. Seventy five nm gate length p-MOSFETs fabricated using this structure are found to exhibit good electrical characteristics. In addition to p-MOSFETs, the S4D structures can be extended to the sub-0.1 μm gate length CMOS devices.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1995|
|Event||Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 6 Jun 1995 → 8 Jun 1995