Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films

R. C. Cammarata*, C. V. Thompson, C. Hayzelden, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

The nucleation and growth kinetics of NiSi2 precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ tn, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates.

Original languageEnglish
Pages (from-to)2133-2138
Number of pages6
JournalJournal of Materials Research
Volume5
Issue number10
DOIs
StatePublished - 1 Jan 1990

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