SILICIDE CONTACT AND GATE IN MICROELECTRONIC DEVICES.

King-Ning Tu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A brief review of silicide metallization technology, i. e. the use of transition metal silicides as contacts and gates in large scale integrated silicon devices, is presented. The low temperature redistribution of dopant induced by a moving silicide-silicon interface is discussed.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherPlenum Press
Pages83-97
Number of pages15
ISBN (Print)0306418037
DOIs
StatePublished - 1 Dec 1984

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    Tu, K-N. (1984). SILICIDE CONTACT AND GATE IN MICROELECTRONIC DEVICES. In Unknown Host Publication Title (pp. 83-97). Plenum Press. https://doi.org/10.1007/978-1-4684-4847-4_5