Silicide barrier engineering induced random telegraph noise in 1Xnm CMOS contacts

Min Cheng Chen*, Chia Yi Lin, Bo Yuan Chen, Chang Hsien Lin, Guo Wei Huang, Chien Chao Huang, Chia Hua Ho, Ta-Hui Wang, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

For the first time, new random telegraph noise behaviors are reported for silicide band gap engineering in advanced nano CMOS technology. Noise current pulses of up to 40% magnitude are observed when Schottky barrier is reduced to 0.2eV. The large contact resistance instability is attributed to barrier modification at Schottky contact interface by positive charge trapping. The prevalence and magnitude of the noise are dependent on the contact size, trap density, trap energy and the silicide Schottky barrier height. In this work, we report a fast monitor methodology to identify the silicide process induced traps in small silicide contacts for 1Xnm CMOS technology.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 5 Dec 20117 Dec 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period5/12/117/12/11

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