Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

Shuo Wei Chen, Young Yang, Wei Chih Wen, Heng Li, Tien-chang Lu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XX
EditorsHeonsu Jeon, Li-Wei Tu, Martin Strassburg, Michael R. Krames
PublisherSPIE
ISBN (Electronic)9781510600034
DOIs
StatePublished - 1 Jan 2016
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - San Francisco, United States
Duration: 15 Feb 201617 Feb 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9768
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
CountryUnited States
CitySan Francisco
Period15/02/1617/02/16

Keywords

  • AlN
  • Internal quantum efficiency (IQE)
  • Light-emitting diodes (LEDs)
  • Multiple quantum wells (MQWs)
  • Sputter

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