SiGe quantum dots over Si pillars for visible to near-infrared broadband photodetection

Wei Ting Lai; Po Hsiang Liao; Andrew P. Homyk; Axel Scherer; Pei-Wen Li

doi:10.1109/LPT.2013.2270281

SiGe quantum dots over Si pillars for visible to near-infrared broadband photodetection

Wei Ting Lai, Po Hsiang Liao, Andrew P. Homyk, Axel Scherer, Pei-Wen Li

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We demonstrate a successful selective growth of Si_0.3Ge _0.7 quantum dots (QDs) over array of p⁺-Si nanopillars using a low-pressure chemical vapor deposition technique, and hereafter realized high-performance QD broadband photodiodes for visible to near-infrared photodetection based on heterostructures of indium tin oxide/Si _0.3Ge_0.7 QD/Si pillar. Thanks to effective hole confinement and thus a built-in electric field within the SiGe QD, high ratios of photocurrent to dark current of ~2200, 100, and 30, respectively, were measured on our SiGe QDs-based photodiodes under illumination of 9 mW/cm ² at wavelength of 500-800, 1300, and 1500 nm. The QD photodiode exhibits a very low dark current density of 3.2 × 10^-8 A/cm² and a tunable power-dependent linearity by applied voltage through the competition of electron drift and carrier recombination processes.

Original language	English
Article number	6544564
Pages (from-to)	1520-1523
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2013.2270281
State	Published - 5 Aug 2013

Keywords

Broadband photodetector
Selective deposition
Si nanopillar
SiGe quantum dot

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title = "SiGe quantum dots over Si pillars for visible to near-infrared broadband photodetection",

abstract = "We demonstrate a successful selective growth of Si0.3Ge 0.7 quantum dots (QDs) over array of p+-Si nanopillars using a low-pressure chemical vapor deposition technique, and hereafter realized high-performance QD broadband photodiodes for visible to near-infrared photodetection based on heterostructures of indium tin oxide/Si 0.3Ge0.7 QD/Si pillar. Thanks to effective hole confinement and thus a built-in electric field within the SiGe QD, high ratios of photocurrent to dark current of ~2200, 100, and 30, respectively, were measured on our SiGe QDs-based photodiodes under illumination of 9 mW/cm 2 at wavelength of 500-800, 1300, and 1500 nm. The QD photodiode exhibits a very low dark current density of 3.2 × 10-8 A/cm2 and a tunable power-dependent linearity by applied voltage through the competition of electron drift and carrier recombination processes.",

keywords = "Broadband photodetector, Selective deposition, Si nanopillar, SiGe quantum dot",

author = "Lai, {Wei Ting} and Liao, {Po Hsiang} and Homyk, {Andrew P.} and Axel Scherer and Pei-Wen Li",

year = "2013",

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T1 - SiGe quantum dots over Si pillars for visible to near-infrared broadband photodetection

AU - Lai, Wei Ting

AU - Liao, Po Hsiang

AU - Homyk, Andrew P.

AU - Scherer, Axel

AU - Li, Pei-Wen

PY - 2013/8/5

Y1 - 2013/8/5

N2 - We demonstrate a successful selective growth of Si0.3Ge 0.7 quantum dots (QDs) over array of p+-Si nanopillars using a low-pressure chemical vapor deposition technique, and hereafter realized high-performance QD broadband photodiodes for visible to near-infrared photodetection based on heterostructures of indium tin oxide/Si 0.3Ge0.7 QD/Si pillar. Thanks to effective hole confinement and thus a built-in electric field within the SiGe QD, high ratios of photocurrent to dark current of ~2200, 100, and 30, respectively, were measured on our SiGe QDs-based photodiodes under illumination of 9 mW/cm 2 at wavelength of 500-800, 1300, and 1500 nm. The QD photodiode exhibits a very low dark current density of 3.2 × 10-8 A/cm2 and a tunable power-dependent linearity by applied voltage through the competition of electron drift and carrier recombination processes.

AB - We demonstrate a successful selective growth of Si0.3Ge 0.7 quantum dots (QDs) over array of p+-Si nanopillars using a low-pressure chemical vapor deposition technique, and hereafter realized high-performance QD broadband photodiodes for visible to near-infrared photodetection based on heterostructures of indium tin oxide/Si 0.3Ge0.7 QD/Si pillar. Thanks to effective hole confinement and thus a built-in electric field within the SiGe QD, high ratios of photocurrent to dark current of ~2200, 100, and 30, respectively, were measured on our SiGe QDs-based photodiodes under illumination of 9 mW/cm 2 at wavelength of 500-800, 1300, and 1500 nm. The QD photodiode exhibits a very low dark current density of 3.2 × 10-8 A/cm2 and a tunable power-dependent linearity by applied voltage through the competition of electron drift and carrier recombination processes.

KW - Broadband photodetector

KW - Selective deposition

KW - Si nanopillar

KW - SiGe quantum dot

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