SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

Pei-Wen Li, E. S. Yang, Y. F. Yang, J. O. Chu, B. S. Meyerson

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One µm Al gate Sio.86 Geo.15p-metal-oxide-semiconductor field-effect-transistors (pMOSFET‘s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2cm2N-s-s at 300 K and 530 cm2N -s at 77 K have been obtained.

Original languageEnglish
Pages (from-to)402-405
Number of pages4
JournalIEEE Electron Device Letters
Volume15
Issue number10
DOIs
StatePublished - 1 Jan 1994

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