Abstract
SiGe gate oxide prepared at low temperatures (25-400°C) by electron cyclotron resonance (ECR) plasma is reported. 100-200 Å oxides were grown on Si0.8Ge0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.
Original language | English |
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Pages (from-to) | 2938-2940 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 21 |
DOIs | |
State | Published - 1 Dec 1993 |