SiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasma

Pei-Wen Li*, E. S. Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

SiGe gate oxide prepared at low temperatures (25-400°C) by electron cyclotron resonance (ECR) plasma is reported. 100-200 Å oxides were grown on Si0.8Ge0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.

Original languageEnglish
Pages (from-to)2938-2940
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number21
DOIs
StatePublished - 1 Dec 1993

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