SiGe-base heterojunction bipolar transistors: Physics and design issues

G. L. Patton*, J. M.C. Stork, J. H. Comfort, E. F. Crabbe, B. S. Meyerson, D. L. Harame, J. Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

40 Scopus citations

Abstract

It has been shown that SiGe technology has the capability to extend the performance of Si bipolar transistors at both high and low current levels. The ability to tailor the bandgap, independently of the doping profile design, provides considerable flexibility for optimizing cutoff frequency, intrinsic base resistance, and junction capacitances for a given application. It is concluded that, when combined with a self-aligned process, SiGe can significantly improve the speed of Si bipolar circuits.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1990
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 9 Dec 199012 Dec 1990

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