Sidewall-fence-free Pt etching with an Ar/O 2 mixed gas plasma

M. C. Chiang*, Fu-Ming Pan, T. C. Wei, H. C. Chien, J. S. Liou, H. K. Chiu

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Platinum has been successfully patterned with a TiN mask in an Ar/O 2 plasma. No fence residue was observed on the etched Pt pattern if the thickness of the TiN mask was less than 300 nm. During the etching process, titanium dioxide and platinum oxides were formed and redeposited on the mask and the Pt structure in the Ar/O 2 plasma according to Auger and XPS analyses. The etch rates of Pt and TiN films decreased with increasing oxygen concentration in the Ar/O 2 gas mixture. The addition of O 2 in the gas mixture could improve the sidewall slope of the etched Pt structure. This was ascribed to redeposited platinum oxides and TiO 2 on the sidewall, which makes the sidewall more resistant to ion etching at a higher concentration of oxygen.

Original languageEnglish
Pages (from-to)211-216
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume564
DOIs
StatePublished - 1 Dec 1999

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