SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films

Yu Hsu Chang, Lung Shen Wang, Hsin-Tien Chiu*, Chi Young Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Amorphous carbon films, characterized by XRD, AFM, SEM and Raman, were deposited from SiCl3CCl3 on quartz substrates at 773-1273 K by low pressure chemical vapor deposition using a hot-wall reactor. XPS studies showed that the films grown at 773 K contained 90% C and 10% Cl, while the films grown at 1273 K contained 100% C. SiCl4, CCl4 and Cl2C = CCl2 were detected by on-line FT-IR studies. The extrusion of dichlorocarbene, :CCl2, from SiCl3CCl3 should provide the source of carbon in the reaction. On Si substrates, an etching process at the film-substrate interface assisted the lift-off of the films from the substrates. The C films curled and formed rolls.

Original languageEnglish
Pages (from-to)1169-1174
Number of pages6
JournalCarbon
Volume41
Issue number6
DOIs
StatePublished - 1 Jan 2003

Keywords

  • A. Carbon films
  • B. Chemical vapor deposition

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