Si tunnel transistors with a novel silicided source and 46mV/dec swing

Kanghoon Jeon*, Wei Yip Loh, Pratik Patel, Chang Yong Kang, Jungwoo Oh, Anupama Bowonder, Chanro Park, C. S. Park, Casey Smith, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, Tsu Jae King Liu, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

200 Scopus citations

Abstract

We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46mV/dec and high I ON /I OFF ratio (∼10 8 ) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages121-122
Number of pages2
DOIs
StatePublished - 19 Oct 2010
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 15 Jun 201017 Jun 2010

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period15/06/1017/06/10

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