We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46mV/dec and high I
) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.