The tremendous progress made with silicon LSIs over the past 25 years has been driven by the miniaturization of MOSFETs. Down-sizing MOSFETs below the 0.1 micron range, however, is proving technologically very difficult due to certain physical limitations. In this paper, we will demonstrate certain ways in which MOSFETs can be taken down to the deep-sub-0.1 micron regime, and also give our views on future LSIs using these MOSFETs.
|Number of pages||6|
|State||Published - 1995|
|Event||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 31 May 1995 → 2 Jun 1995
|Conference||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications|
|Period||31/05/95 → 2/06/95|