Si-based condenser microphone by wafer bonding technique

Ray-Hua Horng*, Z. T. Yuan, K. Y. Hu, C. C. Chang

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

This paper described the fabrication and characteristics of Si-based condenser microphone that is based on wafer bonding technology and semiconductor process. The microphone diaphragm and back-plate are defined on 4" silicon. Then, using wafer bonding with adhesive layer in a vacuum environment, the two wafers are bonded together to form a microphone. The microphones are characterized by bonding strength, bonding yield, frequency response and sensitivity. When microphone was finished, it was combined with the amplifier circuit, then examined its frequency response in the anechoic chamber. The device shows frequency response of -45.4 dBV/Pa (-33 dBV/Pa ref. 1 V/Pa) with 25 V bias in 1 kHz. In addition, the bonded sample can stand for dicing process and the dicing yield is above 90%. The bonding strength is above 5 kg/mm 2. A complete microphone chip after dicing which dimension is 2 mm×2 mm×0.6 mm.

Original languageEnglish
Pages226-232
Number of pages7
StatePublished - 1 Dec 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period16/05/0520/05/05

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  • Cite this

    Horng, R-H., Yuan, Z. T., Hu, K. Y., & Chang, C. C. (2005). Si-based condenser microphone by wafer bonding technique. 226-232. Paper presented at 207th ECS Meeting, Quebec, Canada.