Si and Zn co-doped InGaN-GaN white light-emitting diodes

S. J. Chang*, L. W. Wu, Y. K. Su, Cheng-Huang Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen, J. M. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-related emission at 500-560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN band-edge-related blue emission. By increasing the DMZn mole flow rate to 360 nmole/min, we could achieve a Si and Zn co-doped In0.3Ga0.7N-GaN MQW LED with color temperature of 4100 K, color rendering index of 70, and color coordinates x = 0.383, y = 0.405. It was also found that the 20-mA forward voltage and the breakdown voltage of such Si and Zn co-doped In0.3Ga0.7N-GaN MQW LEDs were both smaller than those of the conventional phosphor-converted white LEDs.

Original languageEnglish
Pages (from-to)519-521
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume50
Issue number2
DOIs
StatePublished - 1 Feb 2003

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