Short-wavelength responses enhanced porous-silicon heterojunction thin film photo-transistor

Y. C. Wang*, Bor-Shyh Lin, Ming-Che Chan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The paper proposed a device with Al / Porous-Silicon / c-Si structures were fabricated and characterized. Experimental results showed that the short-wavelength responses in the developed devices were enhanced as compared to the silicon based homojunction transistors, this comparably medium optical gain indicated that the developed Porous-Silicon / c-Si heterojunction thin film photo-transistor got potential for practical applications The paper proposed a shortwavelength responses enhanced of the Si-based thin film phototransistors can be enhanced by introducing thin porous-layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible-light sensitive phototransistors. Therefore, the more applications of short-wavelength are the trend for bio-medical-detection.

Original languageEnglish
Title of host publicationFiber-Based Technologies and Applications, FBTA 2014
PublisherOptical Society of America (OSA)
ISBN (Electronic)1557522774
DOIs
StatePublished - 18 Jun 2014
EventFiber-Based Technologies and Applications, FBTA 2014 - Wuhan, China
Duration: 18 Jun 201421 Jun 2014

Publication series

NameFiber-Based Technologies and Applications, FBTA 2014

Conference

ConferenceFiber-Based Technologies and Applications, FBTA 2014
CountryChina
CityWuhan
Period18/06/1421/06/14

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  • Cite this

    Wang, Y. C., Lin, B-S., & Chan, M-C. (2014). Short-wavelength responses enhanced porous-silicon heterojunction thin film photo-transistor. In Fiber-Based Technologies and Applications, FBTA 2014 (Fiber-Based Technologies and Applications, FBTA 2014). Optical Society of America (OSA). https://doi.org/10.1364/FBTA.2014.JF2A.18