Short wavelength enhanced phototransistor with n-doped porous silicon layer

Yao Chin Wang*, Bor-Shyh Lin, Zu-Po Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A phototransistor with aluminium (Al)/porous silicon (Si)/epitaxial-Si structures was proposed and was fabricated and characterised with short wavelength enhanced operating. We proposed the short wavelength response of the Si-based thin film phototransistor; it can be enhanced by introducing thin porous Si (PS) layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible-light sensitive phototransistors. Experimental results showed that the short wavelength responses in the developed devices were enhanced as compared with the Si-based homojunction transistors, this comparably medium optical gain indicated that the developed Al/PSi/epitaxial-Si heterojunction thin film phototransistor got potential for practical Si-based optical-electron integrated-circuit and biophotonics applications.

Original languageEnglish
Pages (from-to)947-949
Number of pages3
JournalElectronics Letters
Volume52
Issue number11
DOIs
StatePublished - 26 May 2016

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