Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel and Self-Aligned Tungsten-Clad Source/Drain

Hsiao-Wen Zan*, Ting Chang Chang, Po Sheng Shih, Du Zen Peng, Po Yi Kuo, Tiao Yuan Huang, Chun Yen Chang, Po-Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A short-channel polycrystalline silicon (poly-Si) thin-film transistor (W/ L = 10 μm/3 μm) with an ultrathin channel (30 nm) and self-aligned tungsten-clad source/drain structure is demonstrated. With WF6 and SiH4 gas flow ratio of 40/12, selectively deposited tungsten film over 100 nm thick can be easily grown on source/drain regions. As a result, the parasitic source/drain resistance is greatly reduced, leading to improvement of device driving ability. Because tungsten deposition can be carried out at a low processing temperature of 300°C, the proposed simple structure is compatible with conventional top-gate structure and can be readily applied to low-temperature poly-Si fabrication.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number2
DOIs
StatePublished - 8 Apr 2004

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