Short-channel metal-gate TFTs with modified Schottky-barrier source/drain

Chih Feng Huang*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

A thin active layer, a fully silicided source/drain (S/D), a modified Schottky-barrier, a high dielectric constant (high-κ) gate dielectric, and a metal gate are integrated to realize high-performance thin-film transistors (TFTs). Devices with 0.1-μm gate length were fabricated successfully. Low threshold voltage, low subthreshold swing, high transconductance, low S/D resistance, high on/off current ratio, and negligible threshold voltage rolloff are demonstrated. It is thus suggested for the first time that the short-channel modified Schottky-barrier TFT is a solution to carrier out three-dimension integrated circuits and system-on-panel.

Original languageEnglish
Pages (from-to)43-45
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number1
DOIs
StatePublished - 1 Jan 2006

Keywords

  • Schottky-barrier (SB)
  • Silicide
  • Thin-film transistor (TFT)

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