Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

Wei Xiang You, Chih Peng Tsai, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.

Original languageEnglish
Pages (from-to)1604-1610
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number4
DOIs
StatePublished - 1 Apr 2018

Keywords

  • 2D semiconductors
  • Landau-Khalatnikov (L-K) equation
  • ferroelectric FET
  • high-k gate dielectrics
  • negative-capacitance field-effect transistor (NCFET)
  • short-channel effects
  • subthreshold model
  • transition-metal-dichalcogenide (TMD)

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