Short-channel BEOL ZnON thin-film transistors with superior mobility performance

Chin I. Kuan, Horng-Chih Lin, Pei-Wen Li, Tiao Yuan Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/V-s were measured from ZnON TFTs with channel lengths of 0.5 μm and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.

Original languageEnglish
Title of host publication2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467394789
DOIs
StatePublished - 27 May 2016
EventInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan
Duration: 25 Apr 201627 Apr 2016

Publication series

Name2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Conference

ConferenceInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
CountryTaiwan
CityHsinchu
Period25/04/1627/04/16

Fingerprint Dive into the research topics of 'Short-channel BEOL ZnON thin-film transistors with superior mobility performance'. Together they form a unique fingerprint.

  • Cite this

    Kuan, C. I., Lin, H-C., Li, P-W., & Huang, T. Y. (2016). Short-channel BEOL ZnON thin-film transistors with superior mobility performance. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 [7480533] (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2016.7480533