Shielding of Backgating Effects in GaAs Integrated Circuits

C. P. Lee, Mau-Chung Chang

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Shielding of backgating effects in GaAs IC's by using Schottky metal, ohmic metal, and n--implant has been studied. Contrary to what is expected from the electrostatic principle, positive bias to the shielding bars enhances backgating. Negative bias to the Schottky shielding bars increases the threshold for backgating, effectively reducing the backgating effect. These phenomena are explained in terms of carrier injection controlled by the surface potential. The results indicate that backgating effects can be reduced through proper circuit layout.

Original languageEnglish
Pages (from-to)169-171
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number4
DOIs
StatePublished - 1 Jan 1985

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