Shallow states of donor impurity at the surface of isotropic semicondoctors

Tsin-Fu Jiang, Yueh Shan

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The perturbative variational method is applied to the surface impurity states in semiconductors. It is found that this method can be used to calculate any state, no matter how high it may be, and the surface impurity levels are obtained from those of the hydrogen atom simply by a redefinition of the charge. As a concrete example of the application numerical results are obtained for surface impurity states in GaAs using this method.

Original languageEnglish
Pages (from-to)3399-3406
Number of pages8
JournalJournal of Physics C: Solid State Physics
Volume18
Issue number17
DOIs
StatePublished - 20 Jun 1985

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