Shallow states of donor impurity at the surface of isotropic semicondoctors

Tsin-Fu Jiang; Yueh Shan

doi:10.1088/0022-3719/18/17/016

Shallow states of donor impurity at the surface of isotropic semicondoctors

Tsin-Fu Jiang, Yueh Shan

Institute of Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The perturbative variational method is applied to the surface impurity states in semiconductors. It is found that this method can be used to calculate any state, no matter how high it may be, and the surface impurity levels are obtained from those of the hydrogen atom simply by a redefinition of the charge. As a concrete example of the application numerical results are obtained for surface impurity states in GaAs using this method.

Original language	English
Pages (from-to)	3399-3406
Number of pages	8
Journal	Journal of Physics C: Solid State Physics
Volume	18
Issue number	17
DOIs	https://doi.org/10.1088/0022-3719/18/17/016
State	Published - 20 Jun 1985

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title = "Shallow states of donor impurity at the surface of isotropic semicondoctors",

abstract = "The perturbative variational method is applied to the surface impurity states in semiconductors. It is found that this method can be used to calculate any state, no matter how high it may be, and the surface impurity levels are obtained from those of the hydrogen atom simply by a redefinition of the charge. As a concrete example of the application numerical results are obtained for surface impurity states in GaAs using this method.",

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AB - The perturbative variational method is applied to the surface impurity states in semiconductors. It is found that this method can be used to calculate any state, no matter how high it may be, and the surface impurity levels are obtained from those of the hydrogen atom simply by a redefinition of the charge. As a concrete example of the application numerical results are obtained for surface impurity states in GaAs using this method.

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