Shallow Si/Pd-based ohmic contacts to n-Al 0.5 In 0.5 P

P. H. Hao*, L. C. Wang, J. C.P. Chang, Hao-Chung Kuo, J. M. Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Si/Pd-based contact schemes based on the solid-phase regrowth (SPR) process have been developed to form low-resistance ohmic contacts to M-Al 0.5 In 0.5 P (E g = 2.3 eV) with a minimum contact resistivity of about 6×10 -6 Ω cm 2 . The SPR process responsible for the ohmic contact formation was verified using cross-sectional transmission electron microscopy. The contact resistivity of the Si/Pd-based contacts remained in the range of 2-3×10 -5 Ωcm 2 after aging at 400°C for 25 h. Furthermore, a lateral modulation disordering phenomenon as a result of the SPR process in the regrown AlInP layer has been observed. These ohmic contacts may be useful in some novel Al 0.5 In 0.5 P-related device fabrication schemes.

Original languageEnglish
Pages (from-to)3640-3644
Number of pages5
JournalJournal of Applied Physics
Volume79
Issue number7
DOIs
StatePublished - 1 Apr 1996

Fingerprint Dive into the research topics of 'Shallow Si/Pd-based ohmic contacts to n-Al <sub>0.5</sub> In <sub>0.5</sub> P'. Together they form a unique fingerprint.

Cite this