Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

M. Eizenberg*, H. Föll, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalApplied Physics Letters
Volume37
Issue number6
DOIs
StatePublished - 1 Dec 1980

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