Shallow silicide contact

King-Ning Tu*, W. N. Hammer, J. O. Olowolafe

*Corresponding author for this work

Research output: Contribution to journalArticle

70 Scopus citations

Abstract

Device miniaturization requires dimensional shrinkage not only in the lateral directions but also in the vertical direction. A silicide contact in a shallow junction Si device has to be shallow, which means that in forming the silicide it may not consume more than a few hundred angstroms of Si from the substrate. A general scheme of making such a shallow silicide contact is reported here. The scheme utilizes the effect of alloying to dilute the contact reaction, and it produces a shallow contact and a protective diffusion barrier at the same time. Results of Pt-Cr alloys are presented for illustration.

Original languageEnglish
Pages (from-to)1663-1668
Number of pages6
JournalJournal of Applied Physics
Volume51
Issue number3
DOIs
StatePublished - 1 Dec 1980

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    Tu, K-N., Hammer, W. N., & Olowolafe, J. O. (1980). Shallow silicide contact. Journal of Applied Physics, 51(3), 1663-1668. https://doi.org/10.1063/1.327773