Series resistance and mobility in mechanically-exfoliated layered transition metal dichalcogenide MOSFETs

Angada B. Sachid, Hui Fang, Ali Javey, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We show that transmission line method, where a set of devices are used, does not always correctly estimate series resistance of mechanically-exfoliated transition metal dichalcogenide MOSFETs. We calculate series resistance and carrier mobility from current-voltage characteristics of a single device. We show that series resistance should be considered for accurate mobility calculation even for long channel devices.

Original languageEnglish
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PublisherIEEE Computer Society
ISBN (Print)9781479922178
DOIs
StatePublished - 1 Jan 2014
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
Duration: 28 Apr 201430 Apr 2014

Publication series

NameProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan
CityHsinchu
Period28/04/1430/04/14

Fingerprint Dive into the research topics of 'Series resistance and mobility in mechanically-exfoliated layered transition metal dichalcogenide MOSFETs'. Together they form a unique fingerprint.

Cite this