Series resistance and mobility extraction method in nanoscale MOSFETs

William Po Nien Chen, Pin Su, Ken Ichi Goto, Carlos H. Diaz

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

This paper presents a BSIM-based method for source/drain series resistance and mobility extraction in nanoscale strained-silicon metal oxide semiconductor field effect transistors (MOSFETs) with halo implants. This method is more accurate than the conventional channel-resistance and shift and ratio method because it considers the gate-length dependence of mobility caused by local uniaxial stress and laterally nonuniform channel doping. We have verified this method using samples with different stressor/doping conditions and good agreement with experimental data has been obtained. The accuracy of the Berkeley Short-channel IGFET model (BSIM) Rsd extraction method is also proven by simulated current-voltage characteristics with different external resistant values. Significant mobility degradation in the short-channel regime has been observed for various uniaxial stressors. This method may serve as a suitable process monitor tool for ultrashallow junction and strained process development.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number1
DOIs
StatePublished - 1 Jan 2009

Fingerprint Dive into the research topics of 'Series resistance and mobility extraction method in nanoscale MOSFETs'. Together they form a unique fingerprint.

Cite this