Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equation

Yu Sheng Wu*, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

This paper investigates the sensitivity of multigate MOSFETs to process variations using analytical solutions of 3-D Poisson's equation verified with device simulation. FinFET and Trigate with both heavily doped and lightly doped channels have been examined regarding their immunity to process-induced variations and dopant number fluctuation. Our study indicates that lightly doped FinFET has the smallest threshold voltage (Vth) dispersion caused by process variations and dopant number fluctuation. For heavily doped devices, dopant number fluctuation may become the dominant factor in the determination of overall Vth variation. The Vth dispersion of Tri-gate may therefore be smaller than that of FinFET because of its better immunity to dopant number fluctuation.

Original languageEnglish
Article number4445656
Pages (from-to)299-304
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume7
Issue number3
DOIs
StatePublished - 1 May 2008

Keywords

  • 3-D Poisson's equation
  • FinFET
  • Multigate MOS-FETs
  • Tri-gate
  • Variation

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