Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation

Chiung Hui Lai*, Kow-Ming Chang, Chu Feng Chen, Cheng Ting Hsieh, Chin Ning Wu, Yu Bin Wang, Chung Hsien Liu, Kuo Chin Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The oxidation caused by Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowires. However, previous studies have found that the sensitivity of SGOI nanowires degrades when the Ge fraction exceeds 20, because a high Ge fraction destabilises the surface state of SiGe. In this work, a top surface passivation plasma-enhanced chemical vapour deposition SiO2 layer deposited on a Si0.8Ge 0.2 nanowire improved its sensitivity by ∼1.3 times that of the nanowire sample without a top passivation layer.

Original languageEnglish
Pages (from-to)729-732
Number of pages4
JournalMicro and Nano Letters
Volume7
Issue number8
DOIs
StatePublished - 1 Aug 2012

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    Lai, C. H., Chang, K-M., Chen, C. F., Hsieh, C. T., Wu, C. N., Wang, Y. B., Liu, C. H., & Chang, K. C. (2012). Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation. Micro and Nano Letters, 7(8), 729-732. https://doi.org/10.1049/mnl.2012.0214