Sensitivity enhancement in SGOI nanowire biosensor fabricated by top surface passivation

Kow-Ming Chang*, Chu Feng Chen, Chiung Hui Lai, Cheng Ting Hsieh, Chin Ning Wu, Yu Bin Wang, Chung Hsien Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction is high. In this work, a top surface passtivation SiO 2 layer was deposited on an Si 0.8Ge 0.2 nanowire and successfully improve its sensitivity around 1.3 times that of the nanowire sample without top a passivation layer.

Original languageEnglish
Title of host publication2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Pages579-582
Number of pages4
DOIs
StatePublished - 1 Jun 2012
Event7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, Japan
Duration: 5 Mar 20128 Mar 2012

Publication series

Name2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

Conference

Conference7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
CountryJapan
CityKyoto
Period5/03/128/03/12

Keywords

  • bio-sensor
  • passivation
  • SiGe-on-Insulator

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