Semiself-protection scheme for gigahertz high-frequency output ESD protection

Jian Hsing Lee*, Shao Chang Huang, Hung Der Su, Ke-Horng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component.

Original languageEnglish
Article number5771985
Pages (from-to)1914-1921
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number7
StatePublished - 1 Jul 2011


  • Electrostatic discharge (ESD)
  • radio frequency
  • silicon-controlled rectifier (SCR)

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