To satisfy strict requirements of storage-class memory, a bipolar TaO x/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.
|Title of host publication||2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers|
|State||Published - 9 Sep 2013|
|Event||2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan|
Duration: 11 Jun 2013 → 13 Jun 2013
|Name||Digest of Technical Papers - Symposium on VLSI Technology|
|Conference||2013 Symposium on VLSI Technology, VLSIT 2013|
|Period||11/06/13 → 13/06/13|