Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory

Chung Wei Hsu, I. Ting Wang, Chun Li Lo, Ming Chung Chiang, Wen Yueh Jang, Chen Hsi Lin, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

76 Scopus citations

Abstract

To satisfy strict requirements of storage-class memory, a bipolar TaO x/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.

Original languageEnglish
Title of host publication2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
StatePublished - 9 Sep 2013
Event2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
Duration: 11 Jun 201313 Jun 2013

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2013 Symposium on VLSI Technology, VLSIT 2013
CountryJapan
CityKyoto
Period11/06/1313/06/13

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