Self-patterning of high-performance thin film transistors

Kuo Jui Chang, Feng Yu Yang*, Cheng Chin Liu, Meei Yu Hsu, Ta Chuan Liao, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We have developed a technique for the preparation of thin film transistors (TFTs) through the self-patterning of various organic and inorganic materials via solution processing using a wide range of solvents. To obtain selectively self-patterned layers, we treated the oxide dielectric with two-phase patterned self-assembled monolayers of hexamethyldisilazane (HMDS) and octyltrichlorosilane. The conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) in water and the dielectric polymer poly(vinyl phenol) in propylene glycol methyl ether acetate were both selectively deposited and patterned on the HMDS regions with high-quality feature shapes. When source and drain electrodes were patterned on the bottom-gate oxide wafer, we also self-patterned organic and inorganic semiconductors around the channel (HMDS) regions. These TFT devices exhibited moderate to good electronic characteristics. This method has great potential for the economical full solution processing of large-area electronic devices. The selectivity in the patterning phenomena can be understood in terms of surface energy interactions.

Original languageEnglish
Pages (from-to)815-821
Number of pages7
JournalOrganic Electronics
Volume10
Issue number5
DOIs
StatePublished - 1 Jan 2009

Keywords

  • Organic thin film transistors
  • SAMs
  • Self-patterning
  • Surface energy

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