Self-Organized Ge Nanospherical Gate/SiO 2 /Si 0.15 Ge 0.85 -Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio

Po Hsiang Liao, Kang Ping Peng, Horng-Chih Lin, Thomas George, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Fingerprint Dive into the research topics of 'Self-Organized Ge Nanospherical Gate/SiO <sub>2</sub> /Si <sub>0.15</sub> Ge <sub>0.85</sub> -Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Medicine & Life Sciences