Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platform

P. H. Liao, M. H. Kuo, C. W. Tien, Y. L. Chang, P. Y. Hong, T. George, H. C. Lin, P. W. Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We report the first-of-its-kind, self-organized gate stack of Ge nanosphere (NP) gate/SiO2/Si1-xGex channel fabricated in a single oxidation step. Process-controlled tunability of the Ge NP size (5-90nm), SiO2 thickness (2-4nm), and Ge content (x = 0.65-0.85) and strain engineering (ϵcomp = 1-3%) of the Si1-xGex are achieved. We demonstrated Ge junctionless (JL) n-FETs and photoMOSFETs (PTs) as amplifier and photodetector, respectively, for Ge receivers. LG of 75nm JL n-FETs feature ION/IOFF > 5×108, ION > 500μA/μm at VDS = 1V, T= 80K. Ge-PTs exhibit superior photoresponsivity >1,000A/W and current gain linearity ranging from nW-mW for 850nm illumination. Size-tunable photo-luminescence (PL) of 300-1600nm (NUV-NIR) are observed on 5-100nm Ge NPs. Our gate stack of Ge NP/SiO2/Si1-xGex enables a practically achievable building block for monolithically-integrated Ge electronic and photonic ICs (EPICs) on Si.

Original languageEnglish
Title of host publication2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages157-158
Number of pages2
ISBN (Electronic)9781538642160
DOIs
StatePublished - 25 Oct 2018
Event38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 - Honolulu, United States
Duration: 18 Jun 201822 Jun 2018

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2018-June
ISSN (Print)0743-1562

Conference

Conference38th IEEE Symposium on VLSI Technology, VLSI Technology 2018
CountryUnited States
CityHonolulu
Period18/06/1822/06/18

Keywords

  • Ge
  • Junctionless
  • Monolithic integration
  • Phototransistor

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  • Cite this

    Liao, P. H., Kuo, M. H., Tien, C. W., Chang, Y. L., Hong, P. Y., George, T., Lin, H. C., & Li, P. W. (2018). Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platform. In 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018 (pp. 157-158). [8510695] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2018.8510695