Self-heating enhanced impact ionization in SOI MOSFETs

Pin Su*, K. Goto, T. Sugii, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

13 Scopus citations

Abstract

A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.

Original languageEnglish
Pages31-32
Number of pages2
StatePublished - 1 Jan 2001
Event2001 IEEE International SOI Conference - Durango, CO, United States
Duration: 1 Oct 20014 Oct 2001

Conference

Conference2001 IEEE International SOI Conference
CountryUnited States
CityDurango, CO
Period1/10/014/10/01

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  • Cite this

    Su, P., Goto, K., Sugii, T., & Hu, C-M. (2001). Self-heating enhanced impact ionization in SOI MOSFETs. 31-32. Paper presented at 2001 IEEE International SOI Conference, Durango, CO, United States.