A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.
|Number of pages||2|
|State||Published - 1 Jan 2001|
|Event||2001 IEEE International SOI Conference - Durango, CO, United States|
Duration: 1 Oct 2001 → 4 Oct 2001
|Conference||2001 IEEE International SOI Conference|
|Period||1/10/01 → 4/10/01|