Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

Shih Chin Kao*, Hsiao-Wen Zan, Jung Jie Huang, Bo Cheng Kung

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10 -13 A while the field-effect mobility is 0.42 cm 2 V -1s -1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

Original languageEnglish
StatePublished - 1 Dec 2009
Event2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan
Duration: 27 Apr 200930 Apr 2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
CountryTaiwan
CityTaipei
Period27/04/0930/04/09

Keywords

  • A-Si: H TFT
  • Flexible
  • Reliability
  • Self-heating

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