a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10 -13 A while the field-effect mobility is 0.42 cm 2 V -1s -1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.
|State||Published - 1 Dec 2009|
|Event||2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan|
Duration: 27 Apr 2009 → 30 Apr 2009
|Conference||2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009|
|Period||27/04/09 → 30/04/09|
- A-Si: H TFT