Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin*, Samuel K.H. Fung, Weidong Liu, Philip C.H. Chan, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

55 Scopus citations

Abstract

A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

Original languageEnglish
Pages (from-to)175-178
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 5 Dec 19998 Dec 1999

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