Self-assembled Ni nanodot on SiO2 Film - A novel reactive ion etching mask for Si nanopillar formation on Si substrate

Huang Shen Lin*, Chih Chiang Kao, Hao-Chung Kuo, Shing Chung Wang, Gong Ru Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

By rapid thermal annealing the Ni film evaporated on thin SiO2 layer covered Si substrate, we have successfully demonstrated the self-aggregation of two-dimensional randomized Ni nano-dots on Si wafer. The thin oxide layer prevents the formation of NiSi2 compounds and facilitates the self-assembly of Ni nanodots from retaining the thermal power on SiO2 layer. This greatly shrinks the annealing time required for metallic nanodot formation from >10 min to <30 sec. With the advantage of the self-assemble Ni/SiO2 nano-dots based nano-mask, a large-area Si nano-pillar array with rod size of <50 nm can be formatted on Si substrate through the induced coupled plasma reactive ion etching (ICP-RIE) procedure. After removing Ni dots and the SiO2 film on the Si substrate, both the visible and near infrared photoluminescence from the Si nano-pillar sample were observed and analyzed.

Original languageEnglish
Title of host publicationNanophotonics
DOIs
StatePublished - 9 Aug 2006
EventNanophotonics - Strasbourg, France
Duration: 3 Apr 20065 Apr 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6195
ISSN (Print)0277-786X

Conference

ConferenceNanophotonics
CountryFrance
CityStrasbourg
Period3/04/065/04/06

Keywords

  • Mask
  • Ni nano-dot
  • Reactive ion etching
  • Self-assemble
  • Si
  • Si nano-pillar
  • SiO

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