Self-assembled in0.22Ga0.78As quantum dots grown on GaAs/Ge/SixGe1-x/Si substrate

Y. C. Hsieh; G. L. Luo; Dhrubes Biswas; Edward Yi Chang

doi:10.1109/NANO.2005.1500785

Self-assembled in_0.22Ga_0.78As quantum dots grown on GaAs/Ge/Si_xGe_1-x/Si substrate

Y. C. Hsieh^*, G. L. Luo, Dhrubes Biswas, Edward Yi Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Self-assembled In_0.22Ga_0.78As quantum dots (QDs) fabricated on Si substrate with Ge buffer by metal organic vapor phase (MOVPE) were investigated. Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) images were used to observe the size and distribution of the In_0.22Ga_0.78As QDs grown on the GaAs/Ge/GsSi/Si layer structure. The influence of the growth temperature on the QDs density and distribution was investigated. For QDs grown at 430°C, the density of the In_0.22Ga_0.78As dots was estimated to be 1×10 ¹¹ cm^-2 and the In_0.22Ga_0.78As. QDs thickness was 5 monolayer thick.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Pages	597-600
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2005.1500785
State	Published - 1 Dec 2005
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: 11 Jul 2005 → 15 Jul 2005

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	1

Conference

Conference	2005 5th IEEE Conference on Nanotechnology
Country	Japan
City	Nagoya
Period	11/07/05 → 15/07/05

Keywords

Atomic force microscopy
InGaAs quantum dots
Metal organic vapour-phase epitaxy
Transmission electron microscopy

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@inproceedings{e01fdf48a590490698603d0d7c55de9a,

title = "Self-assembled in0.22Ga0.78As quantum dots grown on GaAs/Ge/SixGe1-x/Si substrate",

abstract = "Self-assembled In0.22Ga0.78As quantum dots (QDs) fabricated on Si substrate with Ge buffer by metal organic vapor phase (MOVPE) were investigated. Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) images were used to observe the size and distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GsSi/Si layer structure. The influence of the growth temperature on the QDs density and distribution was investigated. For QDs grown at 430°C, the density of the In0.22Ga0.78As dots was estimated to be 1×10 11 cm-2 and the In0.22Ga0.78As. QDs thickness was 5 monolayer thick.",

keywords = "Atomic force microscopy, InGaAs quantum dots, Metal organic vapour-phase epitaxy, Transmission electron microscopy",

author = "Hsieh, {Y. C.} and Luo, {G. L.} and Dhrubes Biswas and Chang, {Edward Yi}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/NANO.2005.1500785",

language = "English",

isbn = "0780391993",

series = "2005 5th IEEE Conference on Nanotechnology",

pages = "597--600",

booktitle = "2005 5th IEEE Conference on Nanotechnology",

note = "null ; Conference date: 11-07-2005 Through 15-07-2005",

}

Self-assembled in_0.22Ga_0.78As quantum dots grown on GaAs/Ge/Si_xGe_1-x/Si substrate. / Hsieh, Y. C.; Luo, G. L.; Biswas, Dhrubes; Chang, Edward Yi.

2005 5th IEEE Conference on Nanotechnology. 2005. p. 597-600 1500785 (2005 5th IEEE Conference on Nanotechnology; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Self-assembled in0.22Ga0.78As quantum dots grown on GaAs/Ge/SixGe1-x/Si substrate

AU - Hsieh, Y. C.

AU - Luo, G. L.

AU - Biswas, Dhrubes

AU - Chang, Edward Yi

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Self-assembled In0.22Ga0.78As quantum dots (QDs) fabricated on Si substrate with Ge buffer by metal organic vapor phase (MOVPE) were investigated. Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) images were used to observe the size and distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GsSi/Si layer structure. The influence of the growth temperature on the QDs density and distribution was investigated. For QDs grown at 430°C, the density of the In0.22Ga0.78As dots was estimated to be 1×10 11 cm-2 and the In0.22Ga0.78As. QDs thickness was 5 monolayer thick.

AB - Self-assembled In0.22Ga0.78As quantum dots (QDs) fabricated on Si substrate with Ge buffer by metal organic vapor phase (MOVPE) were investigated. Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) images were used to observe the size and distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GsSi/Si layer structure. The influence of the growth temperature on the QDs density and distribution was investigated. For QDs grown at 430°C, the density of the In0.22Ga0.78As dots was estimated to be 1×10 11 cm-2 and the In0.22Ga0.78As. QDs thickness was 5 monolayer thick.

KW - Atomic force microscopy

KW - InGaAs quantum dots

KW - Metal organic vapour-phase epitaxy

KW - Transmission electron microscopy

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M3 - Conference contribution

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T3 - 2005 5th IEEE Conference on Nanotechnology

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BT - 2005 5th IEEE Conference on Nanotechnology

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