Self-assembled in0.22Ga0.78As quantum dots grown on GaAs/Ge/SixGe1-x/Si substrate

Y. C. Hsieh*, G. L. Luo, Dhrubes Biswas, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Self-assembled In0.22Ga0.78As quantum dots (QDs) fabricated on Si substrate with Ge buffer by metal organic vapor phase (MOVPE) were investigated. Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) images were used to observe the size and distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GsSi/Si layer structure. The influence of the growth temperature on the QDs density and distribution was investigated. For QDs grown at 430°C, the density of the In0.22Ga0.78As dots was estimated to be 1×10 11 cm-2 and the In0.22Ga0.78As. QDs thickness was 5 monolayer thick.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages597-600
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume1

Conference

Conference2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period11/07/0515/07/05

Keywords

  • Atomic force microscopy
  • InGaAs quantum dots
  • Metal organic vapour-phase epitaxy
  • Transmission electron microscopy

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