We report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.
|State||Published - 8 Jun 2014|
|Event||2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States|
Duration: 8 Jun 2014 → 13 Jun 2014
|Conference||2014 Conference on Lasers and Electro-Optics, CLEO 2014|
|Period||8/06/14 → 13/06/14|