Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

Y. K. Fu, Cheng-Huang Kuo*, C. J. Tun, C. W. Kuo, W. C. Lai, G. C. Chi, C. J. Pan, M. C. Chen, H. F. Hong, S. M. Lan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown

Original languageEnglish
Pages (from-to)4456-4459
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number20
DOIs
StatePublished - 1 Oct 2008

Keywords

  • A1. Photoluminescence
  • A3. Metal-organic vapor phase epitaxy
  • B1. InGaN buffer layer
  • B1. Indium nitride
  • B2. Semiconducting III-V materials

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